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2SC3038 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). Fast Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lot var.

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Datasheet Specifications

Part number
2SC3038
Manufacturer
INCHANGE
File Size
212.54 KB
Datasheet
2SC3038-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak

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