2SC3011 Datasheet - Toshiba Semiconductor

2SC3011 Silicon NPN epitaxial planer Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 2SC3011 UHF~C Band Low Noise Amplifier Applications Unit: mm High gain: |S21e|2 = 12dB (typ.) Low noise figure: NF = 2.3dB (typ.), f = 1 GHz High fT: fT = 6.5 GHz Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IE .

2SC3011_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SC3011

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

166.59 KB

Description:

Silicon npn epitaxial planer transistor.

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2SC3011 2SC3011 Silicon NPN epitaxial planer Transistor Toshiba Semiconductor

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