2SC3074 Datasheet - Toshiba Semiconductor

2SC3074 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 2SC3074 High Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SA1244 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current I.

2SC3074 Features

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2SC3074_ToshibaSemiconductor.pdf