2SC3070 Datasheet - Sanyo Semicon Device

2SC3070 NPN Epitaxial Planar Silicon Transistor

2SC3070 Features

* High DC current gain (hFE=800 to 3200).

* Large current capacity (IC=1.2A).

* Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).

* High VEBO (VEBO≥15V). EIAJ : SC-51 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-t

Datasheet Details

2SC3070

Sanyo Semicon Device

120.30 KB

Npn epitaxial planar silicon transistor.

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