* High DC current gain (hFE=800 to 3200).
* Large current capacity (IC=1.2A).
* Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).
* High VEBO (VEBO≥15V). EIAJ : SC-51 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-t
2SC3070
Sanyo Semicon Device
120.30 KB
Npn epitaxial planar silicon transistor.
Ordering number:EN923G
NPN Epitaxial Planar Silicon Transistor
2SC3070
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
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📁 Related Datasheet
2SC3071 - NPN Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number:EN946G
NPN Epitaxial Planar Silicon Transistor
2SC3071
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
·.
2SC3072 - Silicon NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3072
Strobe Flash Applications Medium Power Amplifier Applications
2SC3072
Unit: mm
•.
2SC3072 - Silicon NPN Transistor
(Kexin)
SMD Type
Silicon NPN Epitaxial 2SC3072
TO-252
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High DC current gain. Low collector satura.
2SC3073 - Silicon NPN Transistor
(Toshiba Semiconductor)
:
2SC3073
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS. CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS.
FEATURES.
2SC3074 - Silicon NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3074
2SC3074
High Current Switching Applications
Unit: mm
• Low collector saturatio.
2SC3074 - TO-251 NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SC3074
DESCRIPTION ·With TO-251(IPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation v.
2SC3074 - TO-252 NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SC3074
DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation v.
2SC3074 - Silicon NPN Transistor
(Kexin)
SMD Type
Silicon NPN Epitaxial 2SC3074
TO-252
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low collector saturation voltage. High spe.
