2SC3071 Datasheet - Sanyo Semicon Device

2SC3071 NPN Epitaxial Planar Silicon Transistor

2SC3071 Features

* High DC current gain (hFE=500 to 2000).

* High breakdown voltage (VCEO≥100V).

* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).

* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2006B [2SC3071] EIAJ : SC-51 Specifications Absolute Maximum Ratings at Ta = 25˚C Par

Datasheet Details

2SC3071

Sanyo Semicon Device

82.69 KB

Npn epitaxial planar silicon transistor.

📁 Related Datasheet

2SC3070 NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)

2SC3072 Silicon NPN Transistor (Toshiba Semiconductor)

2SC3072 Silicon NPN Transistor (Kexin)

2SC3073 Silicon NPN Transistor (Toshiba Semiconductor)

2SC3074 Silicon NPN Transistor (Toshiba Semiconductor)

2SC3074 TO-251 NPN Transistor (INCHANGE)

2SC3074 TO-252 NPN Transistor (INCHANGE)

2SC3074 Silicon NPN Transistor (Kexin)

TAGS

2SC3071 Distributor