2SC3071 Datasheet - Sanyo Semicon Device

2SC3071 NPN Epitaxial Planar Silicon Transistor

2SC3071 Features

* High DC current gain (hFE=500 to 2000).

* High breakdown voltage (VCEO≥100V).

* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).

* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2006B [2SC3071] EIAJ : SC-51 Specifications Absolute Maximum Ratings at Ta = 25˚C Par

Datasheet Details

2SC3071

Sanyo Semicon Device

82.69 KB

Npn epitaxial planar silicon transistor.

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