* High DC current gain (hFE=500 to 2000).
* High breakdown voltage (VCEO≥100V).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2006B [2SC3071] EIAJ : SC-51 Specifications Absolute Maximum Ratings at Ta = 25˚C Par
2SC3071
Sanyo Semicon Device
82.69 KB
Npn epitaxial planar silicon transistor.
Ordering number:EN946G
NPN Epitaxial Planar Silicon Transistor
2SC3071
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
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(Sanyo Semicon Device)
Ordering number:EN923G
NPN Epitaxial Planar Silicon Transistor
2SC3070
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
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2SC3072 - Silicon NPN Transistor
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2SC3072
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2SC3072
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•.
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+0.8 0.50-0.7 +0.1 -0.1
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High DC current gain. Low collector satura.
2SC3073 - Silicon NPN Transistor
(Toshiba Semiconductor)
:
2SC3073
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS. CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS.
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2SC3074 - Silicon NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3074
2SC3074
High Current Switching Applications
Unit: mm
• Low collector saturatio.
2SC3074 - TO-251 NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SC3074
DESCRIPTION ·With TO-251(IPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation v.
2SC3074 - TO-252 NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SC3074
DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation v.
2SC3074 - Silicon NPN Transistor
(Kexin)
SMD Type
Silicon NPN Epitaxial 2SC3074
TO-252
Transistors
Unit: mm 2.30
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Low collector saturation voltage. High spe.
