Datasheet4U Logo Datasheet4U.com

2SC3032 - NPN Transistor

2SC3032 Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SC3032 .
Low Collector Saturation Voltage. Low Collector-Emitter Breakdown Voltage. Good Linearity of hFE. 100% avalanche tested. Minimum.

2SC3032 Applications

* Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous

📥 Download Datasheet

Preview of 2SC3032 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SC3032
Manufacturer
INCHANGE
File Size
186.04 KB
Datasheet
2SC3032-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SC3030 - TRIPLE DIFFUSED PLANER TYPE NPN TRANSISTOR (Fuji Electric)
  • 2SC3038 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3039 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3000 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3001 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
  • 2SC3006 - Silicon NPN epitaxial planer type Transistor (Toshiba Semiconductor)
  • 2SC3007 - Silicon NPN Transistor (Toshiba)
  • 2SC3011 - Silicon NPN epitaxial planer Transistor (Toshiba Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SC3032-like datasheet