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2SC3025 - NPN Transistor

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Part number 2SC3025
Manufacturer INCHANGE
File Size 184.96 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage power switching character display horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emi

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