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2SC3026 - NPN Transistor

2SC3026 Description

isc Silicon NPN Power Transistor 2SC3026 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 2. Minimum.

2SC3026 Applications

* Designed for high-voltage power switching character display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector

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Datasheet Details

Part number
2SC3026
Manufacturer
INCHANGE
File Size
185.31 KB
Datasheet
2SC3026-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC3026-like datasheet