Datasheet Details
- Part number
- 2SC3550
- Manufacturer
- Inchange Semiconductor
- File Size
- 199.02 KB
- Datasheet
- 2SC3550_InchangeSemiconductor.pdf
- Description
- Power Transistor
2SC3550 Description
isc Silicon NPN Power Transistor 2SC3550 .
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min).
High Switching Speed.
High Reliability.
Minimum Lot-to-Lot variation.
2SC3550 Applications
* Switching regulators
* Ultrasonic generators
* High frequency inverters
* General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base voltage
10
V
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