2SC3550 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SC3550 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min). High Switching Speed. High Reliability. Minimum Lot-to-Lot variation.

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Datasheet Specifications

Part number: 2SC3550
Manufacturer: Inchange Semiconductor
File Size: 199.02 KB
Datasheet: 2SC3550_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Switching regulators
* Ultrasonic generators
* High frequency inverters
* General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 10 V

2SC3550 Distributors

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2SC3550 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SC3550-like datasheet