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2SC3551 - NPN Transistor

2SC3551 Description

isc Silicon NPN Power Transistor 2SC3551 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min). High Switching Speed. High Reliability. Minimum Lot-to-Lot variation.

2SC3551 Applications

* Switching regulators
* Ultrasonic generators
* High frequency inverters
* General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 9 V

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Datasheet Details

Part number
2SC3551
Manufacturer
INCHANGE
File Size
188.05 KB
Datasheet
2SC3551-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC3551-like datasheet