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2SC3519 NPN Transistor

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Description

isc Silicon NPN Power Transistors .
Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A. Good Linearity of hFE. Complement to Type 2SA1386/.

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Datasheet Specifications

Part number
2SC3519
Manufacturer
INCHANGE
File Size
199.16 KB
Datasheet
2SC3519-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SC3519 160 VCBO Collector-Base Voltage V 2SC3519A 180 2SC3519 160 VCEO Collector-Emitter Voltage V 2SC3519A 180 VEBO Emitter-Base Voltage 5 V IC Collector C

2SC3519 Distributors

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