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2SC3507 - NPN Transistor

2SC3507 Description

isc Silicon NPN Power Transistor .
High Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device perf.

2SC3507 Applications

* Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 5 A

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Datasheet Details

Part number
2SC3507
Manufacturer
INCHANGE
File Size
215.44 KB
Datasheet
2SC3507-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC3507-like datasheet