2SC3507 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device perf.

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Datasheet Specifications

Part number: 2SC3507
Manufacturer: INCHANGE
File Size: 215.44 KB
Datasheet: 2SC3507-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 5 A

2SC3507 Distributors

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2SC3507 NPN Transistor INCHANGE

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