Datasheet Details
- Part number
- 2SC3507
- Manufacturer
- INCHANGE
- File Size
- 215.44 KB
- Datasheet
- 2SC3507-INCHANGE.pdf
- Description
- NPN Transistor
2SC3507 Description
isc Silicon NPN Power Transistor .
High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min).
High Switching Speed.
Minimum Lot-to-Lot variations for robust device
perf.
2SC3507 Applications
* Designed for switching regulator and high voltage
switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
5
A
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