2SC3871 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of

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Power Transistors 2SC3871 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 0.7±0.1 10.0±0.2 4.2±

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