2SC4655 Datasheet | Specifications & PDF Download

Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 s Features q q 0.4 0.8±0.1 0.4 0.2–0.05 0

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Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification ■ Features • Optimum for RF amplification, oscillation, mixin

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Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4655G Silicon NPN epitaxial planar type For high-frequency amplifica

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