SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIG.
Hitachi Semiconductor
2SC5050 - NPN TRANSISTOR
2SC5050 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low nois.
Rohm
2SC5053 - Medium Power Transistor
Transistors 2SC5053 Medium power transistor (50V, 1A) 2SC5053 zFeatures 1) Low saturation voltage, typically VCE(sat)=0.12V at IC/ IB=500mA/50mA 2.
Renesas
2SC5050 - Silicon NPN Transistor
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th.
Renesas
2SC5051 - Silicon NPN Transistor
2SC5051 Silicon NPN Epitaxial REJ03G0741-0300 (Previous ADE-208-1131A) Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • Hig.
Hitachi Semiconductor
2SC5051 - NPN TRANSISTOR
2SC5051 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low nois.
Toshiba
2SC505 - SILICON NPN TRANSISTOR
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High Breakdown Vol.
Hitachi Semiconductor
2SC5057 - Silicon NPN Triple Diffused Planar Transistor
2SC5057 Silicon NPN Triple Diffused Planar Application HDTV horizontal deflection output Features • High breakdown voltage VCBO = 1700 V Outline TO-3.
Kexin
2SC5053 - Medium Power Transistor
SMD Type Medium Power Transistor 2SC5053 Transistors Features Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA. PC=2W (o.
