2SC5345 Datasheet | Specifications & PDF Download

2SC5345 Elektronische Bauelemente 0.02A , 30V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fr

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Semiconductor 2SC5345UF NPN Silicon Transistor Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE

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Semiconductor Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance :

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2SC5345 TRANSISTOR (NPN) FEATURES z RF amplifier High current transition frequency fT=550MHz(Typ.), z [VCE=6V, IE=-1mA] z Low output capacitance : Cob

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2SC5345M NPN Silicon Transistor Description • RF amplifier PIN Connection Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE

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2SC5345 NPN Silicon Epitaxial Planar Transistor RF amplifier applications. The transistor is subdivided into three groups, R, O and Y. according to it

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Semiconductor 2SC5345SF NPN Silicon Transistor Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC5345 TRANSISTOR (NPN) FEATURES z RF amplifier z High curr

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Semiconductor 2SC5345 NPN Silicon Transistor Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-

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Semiconductor 2SC5345EF NPN Silicon Transistor Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE

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Semiconductor Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance :

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Silicon Epitaxial Planar Transistor FEATURES z High current transition frequency z Low output capacitance:Cob=1.4pF z Low base time constant and high

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Semiconductor 2SC5345N NPN Silicon Transistor Description • RF amplifier Features • • • • High transition frequency : fT=550MHz(Typ.) @[VCE=6V, IC=

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ST 2SC5345 NPN Silicon Epitaxial Planar Transistor RF amplifier applications. The transistor is subdivided into three groups, R, O and Y. according to

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