TOSHIBA Transistor Silicon NPN Triple Diffused Typ.
Toshiba
C5359 - 2SC5359
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications 2SC5359 Unit: mm • High breakdown voltage: VCEO = 230 V • C.
INCHANGE
2SC5359 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5359 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter.
Toshiba Semiconductor
2SC5359 - NPN TRANSISTOR
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications 2SC5359 Unit: mm • High breakdown voltage: VCEO = 230 V • C.
SavantIC
2SC5359 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5359 www.datasheet4u.com DESCRIPTION ·With TO-3PL package ·Compleme.