2SC5359
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Power Amplifier Applications
Unit: mm
- High breakdown voltage: VCEO = 230 V
- plementary to 2SA1987
- Suitable for use in 100-W high fidelity audio amplifier’s output stage.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 230 V
Collector-emitter voltage
VCEO 230 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 15 A
Base current
IB 1.5 A
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
PC 180 W
Tj 150 °C
T stg
- 55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-21F1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 9.75 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute...
