2SCR542D Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain hFE :200-500@ IC= 0.5A ·Collector-Emitter Breakdown Voltage : V(BR) CEO= 30V(Min) ·Min

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Midium Power Transistors (30V / 5A) 2SCR542D  Structure NPN Silicon epitaxial planar transistor  Features 1) Low saturation voltage VCE (sat) = 0.4

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