2SD1157 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor 2SD1157 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : hFE= 250V(M

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Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 -

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