2SD1255 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector-Emitter Saturation Voltag

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SMD Type NPN Transistors 2SD1255 Transistors ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector

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Power Transistors 2SD1255 Silicon NPN epitaxial planar type For power switching Complementary to 2SB932 8.5±0.2 6.0±0.5 Unit: mm 3.4±0.3 1.0±0.1 10

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