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2SD1769 Silicon NPN Transistor

Darlington 2SD1769 sElectrical Characteristics Sy.

2SD1769

Darlington 2SD1769 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3

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Silicon NPN Transistor

Darlington 2SD1769 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3

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NPN Transistor

isc Silicon NPN Darlington Power Transistor 2SD1769 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 3A ·Collector-Emitter Sustaining Volta

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