2SD1889 Datasheet | Specifications & PDF Download

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain- : hFE= 200

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1889 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·DARLIN

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