2SD2014 Darlington Equivalent C circuit B (3kΩ).
2SD2014 - Silicon NPN Transistor
2SD2014 Darlington Equivalent C circuit B (3kΩ) (200Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) Application : Dr.2SD2014 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2014 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·DARLING.2SD2014 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Volt.