2SD2083 Datasheet | Specifications & PDF Download

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown V

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Darlington 2SD2083 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=1

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