2SD2401 Datasheet | Specifications & PDF Download

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000

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2SD2401 Darlington Equivalent circuit C B (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570) Application : Audio, S

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2401 www.datasheet4u.com DESCRIPTION ·With MT-200 package ·Compleme

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