isc Silicon NPN Darlington Power Transistor DESCR.
2SD2557 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2557 www.datasheet4u.com DESCRIPTION ·With TO-3PN packag.2SD2557 - Silicon NPN Transistor
Equivalent circuit C Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2557 200 200 6 5 2 70(Tc=25°C) 150 –55.2SD2557 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 1A, VCE= 5V ·Collector-Emitter Breakdown Voltage.