isc Silicon NPN Darlington Power Transistor DESCRI.
2SD2560 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2560 www.datasheet4u.com DESCRIPTION ·With TO-3PN packag.D2560 - 2SD2560
Equivalent circuit C Darlington 2SD2560 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=.2SD2560 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000.2SD2560 - Silicon NPN Transistor
2SD2560 Darlington Equivalent circuit C B (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) Application : Audio, S.