2SD2642 Datasheet | Specifications & PDF Download

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2SD2642 Silicon NPN Transistor

Equivalent circuit C Darlington 2SD2642 sElectr.

Sanken electric

D2642 - 2SD2642

Equivalent circuit C Darlington 2SD2642 sElectrical Characteristics Symbol ICBO IEBO Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA.
Rating: 1 (2 votes)
Inchange Semiconductor

2SD2642 - Silicon NPN Darlington Power Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·High DC Current Gain- : hFE= 500.
Rating: 1 (2 votes)
Sanken Electric

2SD2642 - Silicon NPN Transistor

Equivalent circuit C Darlington 2SD2642 sElectrical Characteristics Symbol ICBO IEBO Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA.
Rating: 1 (1 votes)
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