isc Silicon NPN Power Transistors DESCRIPTION ·C.
2SD428 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=.D428 - 2SD428
INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2SD428 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)C.