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2SD428 - Silicon NPN Power Transistors

2SD428 Description

isc Silicon NPN Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High Power Dissipation- : PC= 60W(Max)@TC=25℃. Complement to Type 2SB558.

2SD428 Applications

* Designed for power amplifier applications.
* Recommended for 40W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage

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Datasheet Details

Part number
2SD428
Manufacturer
Inchange Semiconductor
File Size
208.94 KB
Datasheet
2SD428_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

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Silicon NPN Power Transistors Inchange Semiconductor
Inchange Semiconductor 2SD428-like datasheet