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2SD469 - Silicon NPN Power Transistor

2SD469 Description

isc Silicon NPN Darlingtion Power Transistor .
Low Collector-Emitter Breakdown Voltage V(BR)CEO= 110V (Min). Collector Power Dissipation. Pc=100W@TC=25℃. Minimum Lot-to-Lot variat.

2SD469 Applications

* Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 10 V IC Collector Current -C

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Datasheet Details

Part number
2SD469
Manufacturer
Inchange Semiconductor
File Size
207.60 KB
Datasheet
2SD469-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD469-like datasheet