Datasheet Details
- Part number
- 2SD469
- Manufacturer
- Inchange Semiconductor
- File Size
- 207.60 KB
- Datasheet
- 2SD469-InchangeSemiconductor.pdf
- Description
- Silicon NPN Power Transistor
2SD469 Description
isc Silicon NPN Darlingtion Power Transistor .
Low Collector-Emitter Breakdown Voltage
V(BR)CEO= 110V (Min).
Collector Power Dissipation.
Pc=100W@TC=25℃.
Minimum Lot-to-Lot variat.
2SD469 Applications
* Designed for use in converters, inverters, switching
regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current -C
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