2SD469 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlingtion Power Transistor .
Low Collector-Emitter Breakdown Voltage V(BR)CEO= 110V (Min). Collector Power Dissipation. Pc=100W@TC=25℃. Minimum Lot-to-Lot variat.

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Datasheet Specifications

Part number: 2SD469
Manufacturer: Inchange Semiconductor
File Size: 207.60 KB
Datasheet: 2SD469-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 10 V IC Collector Current -C

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2SD469 Silicon NPN Power Transistor Inchange Semiconductor

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