2SD460 Datasheet - INCHANGE

2SD460, NPN Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD460 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain : hFE= 1500(Min) @IC= 5A. Low Saturation Voltage. Mi.

Applications

* Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IC

2SD460-INCHANGE.pdf