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2SD460 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain : hFE= 1500(Min) @IC= 5A Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and s

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Datasheet Details

Part number 2SD460
Manufacturer INCHANGE
File Size 185.98 KB
Description NPN Transistor
Datasheet download datasheet 2SD460 Datasheet
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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD460 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 5A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications.
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