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2SD437 NPN Transistor

2SD437 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD437 .
High Collector-Emitter Breakdown Voltage- : = V(BR)CEO 350V (Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-.

2SD437 Applications

* Designed for use in power amplifier and switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IC

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Datasheet Details

Part number
2SD437
Manufacturer
INCHANGE
File Size
179.50 KB
Datasheet
2SD437-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD437-like datasheet