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2SD426 NPN Transistor

2SD426 Description

isc Silicon NPN Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). High Power Dissipation- : PC= 100W(Max)@TC=25℃. Complement to Type 2SB556.

2SD426 Applications

* Designed for power amplifier applications.
* Recommended for high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5

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Datasheet Details

Part number
2SD426
Manufacturer
INCHANGE
File Size
204.79 KB
Datasheet
2SD426-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD426-like datasheet