2SD426 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). High Power Dissipation- : PC= 100W(Max)@TC=25℃. Complement to Type 2SB556.

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Datasheet Specifications

Part number: 2SD426
Manufacturer: INCHANGE
File Size: 204.79 KB
Datasheet: 2SD426-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifier applications.
* Recommended for high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5

2SD426 Distributors

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2SD426 NPN Transistor INCHANGE

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