2SD463 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD463 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). High DC Current Gain : hFE= 3000(Min) @IC= 5A. Low Saturation Voltage. 100.

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Datasheet Specifications

Part number: 2SD463
Manufacturer: INCHANGE
File Size: 182.17 KB
Datasheet: 2SD463-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO IC ICP IB PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous C

2SD463 Distributors

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2SD463 NPN Transistor INCHANGE

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