2SD463 Datasheet - INCHANGE

2SD463, NPN Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD463 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). High DC Current Gain : hFE= 3000(Min) @IC= 5A. Low Saturation Voltage. 100.

Applications

* Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO IC ICP IB PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous C

2SD463-INCHANGE.pdf