2SD425 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min). High Power Dissipation- : PC= 100W(Max)@TC=25℃. Complement to Type 2SB555.

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Datasheet Specifications

Part number: 2SD425
Manufacturer: INCHANGE
File Size: 204.56 KB
Datasheet: 2SD425-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifier applications.
* Recommended for high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5

2SD425 Distributors

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2SD425 NPN Transistor INCHANGE

INCHANGE 2SD425-like datasheet