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2SD459 NPN Transistor

2SD459 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD459 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). High DC Current Gain : hFE= 1500(Min) @IC= 5A. Low Saturation Voltage. Min.

2SD459 Applications

* Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous ICP Colle

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Datasheet Details

Part number
2SD459
Manufacturer
INCHANGE
File Size
186.17 KB
Datasheet
2SD459-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD459-like datasheet