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2SD401 - Silicon Transistor

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Description

SILICON EPITAXAL PLANAR TRANSISTOR Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS VBE = 0V MIN MAX 200 150 2 20 1.5 2.0 UNIT V V A A W V V s VCESM VCEO IC ICM Ptot VCEsat VF t

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Datasheet Details

Part number 2SD401
Manufacturer Wing Shing Computer Components
File Size 64.71 KB
Description Silicon Transistor
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2SD401 GENERAL DESCRIPTION SILICON EPITAXAL PLANAR TRANSISTOR Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS VBE = 0V MIN MAX 200 150 2 20 1.5 2.0 UNIT V V A A W V V s VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time Tmb 25 IC = 1.5A; IB = 0.15A IF = 1.5A 1.
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