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2SD424 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
High Power Dissipation- : PC= 150W@TC= 25℃. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min). Complement to Type 2SB554.

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Datasheet Specifications

Part number
2SD424
Manufacturer
INCHANGE
File Size
203.76 KB
Datasheet
2SD424-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for power amplifier ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A I

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