2SD427 Datasheet - Inchange Semiconductor

2SD427, Silicon NPN Power Transistors

isc Silicon NPN Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). High Power Dissipation- : PC= 80W(Max)@TC=25℃. Complement to Type 2SB557.

2SD427_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD427

Manufacturer:

Inchange Semiconductor

File Size:

204.99 KB

Description:

Silicon NPN Power Transistors

Applications

* Designed for power amplifier applications.
* Recommended for 50W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage

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2SD427 Silicon NPN Power Transistors Inchange Semiconductor

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