2SD427 Datasheet - Inchange Semiconductor

2SD427 - Silicon NPN Power Transistors

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *High Power Dissipation- : PC= 80W(Max)@TC=25℃ *Complement to Type 2SB557 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power amplifier applications. *.

2SD427_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD427

Manufacturer:

Inchange Semiconductor

File Size:

204.99 KB

Description:

Silicon npn power transistors.

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2SD427 Silicon NPN Power Transistors Inchange Semiconductor