2SD476N Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistors .
Low Collector Saturation Voltage : VCE(sat)= 1. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min). Minimum Lot-to.

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Datasheet Specifications

Part number: 2SD476N
Manufacturer: Inchange Semiconductor
File Size: 208.01 KB
Datasheet: 2SD476N-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Co

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2SD476N Silicon NPN Power Transistor Inchange Semiconductor

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