2SD476N Datasheet - Inchange Semiconductor

2SD476N, Silicon NPN Power Transistor

isc Silicon NPN Power Transistors .
Low Collector Saturation Voltage : VCE(sat)= 1. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min). Minimum Lot-to.

Applications

* Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Co

2SD476N-InchangeSemiconductor.pdf