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2SD473 NPN Transistor

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Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD473 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 2. Fast S.

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Datasheet Specifications

Part number
2SD473
Manufacturer
INCHANGE
File Size
180.94 KB
Datasheet
2SD473-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEO Collector-Emitter Voltage 100 UNIT V V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1

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