2SD458 Datasheet - Inchange Semiconductor

2SD458 Silicon NPN Power Transistors

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) *High Power Dissipation- : PC= 80W(Max)@TC=25℃ *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for high power amplifier and switching applications. ABSOLUTE MAXIMU.

2SD458 Datasheet (207.43 KB)

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Datasheet Details

Part number:

2SD458

Manufacturer:

Inchange Semiconductor

File Size:

207.43 KB

Description:

Silicon npn power transistors.

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2SD458 Silicon NPN Power Transistors Inchange Semiconductor

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