2SD458 - Silicon NPN Power Transistors

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Power Dissipation- : PC= 80W(Max)@TC=25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high power amplifier and switching applications.

Inchange Semiconductor

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Datasheet Details

Part number	2SD458
Manufacturer	Inchange Semiconductor
File Size	207.43 KB
Description	Silicon NPN Power Transistors
Datasheet	2SD458 Datasheet
Additional preview pages of the 2SD458 datasheet.

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier and switching applications.

Published: Jun 1, 2012 |