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2SD676 - NPN Transistor
isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min) ·High Power Dissipation-
: PC= 125W(Max)@TC
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isc Silicon NPN Power Transistors DESCRIPTION ·C.
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2SD676 Distributor
