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2SD676

NPN Transistor

2SD676 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) *High Power Dissipation- : PC= 125W(Max)@TC=25℃ *Complement to Type 2SB656 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low frequency power amplifier appl.

2SD676 Datasheet (202.76 KB)

Preview of 2SD676 PDF

Datasheet Details

Part number:

2SD676

Manufacturer:

INCHANGE

File Size:

202.76 KB

Description:

Npn transistor.

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2SD676 NPN Transistor INCHANGE

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