2SD676 Datasheet - INCHANGE

2SD676 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) *High Power Dissipation- : PC= 125W(Max)@TC=25℃ *Complement to Type 2SB656 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low frequency power amplifier appl.

2SD676 Datasheet (202.76 KB)

2SD676 Datasheet Preview — Preview of 2SD676 PDF

Datasheet Details

Part number:

2SD676

Manufacturer:

INCHANGE

File Size:

202.76 KB

Description:

Npn transistor.

📁 Related Datasheet

2SD670 NPN Transistor (INCHANGE)

2SD673 NPN Transistor (INCHANGE)

2SD675 NPN Transistor (INCHANGE)

2SD677 NPN Power Transistor (Fuji)

2SD679 NPN Transistor (INCHANGE)

2SD60 NPN Transistor (INCHANGE)

2SD600 PNP/NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)

2SD600 NPN Transistor (INCHANGE)

2SD600 SILICON POWER TRANSISTOR (SavantIC)

2SD600 PNP / NPN Epitaxial Planar Silicon Transistors (ON Semiconductor)

TAGS

2SD676 NPN Transistor INCHANGE

Image Gallery

2SD676 Distributor