2SD676 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min). High Power Dissipation- : PC= 125W(Max)@TC=25℃. Complement to Type 2SB656.

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Datasheet Specifications

Part number: 2SD676
Manufacturer: INCHANGE
File Size: 202.76 KB
Datasheet: 2SD676-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Cu

2SD676 Distributors

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2SD676 NPN Transistor INCHANGE

INCHANGE 2SD676-like datasheet