2SD605 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD605 .
Low Collector Saturation Voltage. High DC Current Gain. 100% avalanche tested. Minimum Lot-to-Lot variations for robust device perfor.

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Datasheet Specifications

Part number: 2SD605
Manufacturer: INCHANGE
File Size: 177.21 KB
Datasheet: 2SD605-INCHANGE.pdf
Description: NPN Transistor

Applications

* High ruggedness electronic ignitions
* High voltage ignition coil driver
* General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 600 UNIT V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 10 V I

2SD605 Distributors

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2SD605 NPN Transistor INCHANGE

INCHANGE 2SD605-like datasheet