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2SD612 - NPN Transistor

2SD612 Description

isc Silicon NPN Power Transistor 2SD612 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V(Min. High Collector Dissipation. Wide Area of Safe Operation. Complement to Ty.

2SD612 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICP Collector Curre

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Datasheet Details

Part number
2SD612
Manufacturer
INCHANGE
File Size
210.08 KB
Datasheet
2SD612-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD612-like datasheet