2SD612 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD612 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V(Min. High Collector Dissipation. Wide Area of Safe Operation. Complement to Ty.

📥 Download Datasheet

2SD612 Datasheet Preview — Preview of 2SD612 PDF

Datasheet Specifications

Part number: 2SD612
Manufacturer: INCHANGE
File Size: 210.08 KB
Datasheet: 2SD612-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICP Collector Curre

2SD612 Distributors

📁 Related Datasheet

2SD612K 2SD613 2SD613P 2SD600 2SD600K 2SD601

📌 All Tags

2SD612 NPN Transistor INCHANGE

INCHANGE 2SD612-like datasheet