2SD608 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD608 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min). Complement to Type 2SB628. Minimum Lot-to-Lot variations for robust device pe.

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Datasheet Specifications

Part number: 2SD608
Manufacturer: INCHANGE
File Size: 209.86 KB
Datasheet: 2SD608-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous

2SD608 Distributors

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2SD608 NPN Transistor INCHANGE

INCHANGE 2SD608-like datasheet