2SD673 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistors 2SD673 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High Power Dissipation- : PC= 60W(Max)@TC=25℃. Complement to Type 2SB653.

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Datasheet Specifications

Part number: 2SD673
Manufacturer: INCHANGE
File Size: 203.28 KB
Datasheet: 2SD673-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Cur

2SD673 Distributors

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2SD673 NPN Transistor INCHANGE

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